Investigated the performance of the GaN-based Resonant-Cavity Light-Emitting Diode
碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 94 === For recent years, many researches have been published in red RCLED, but few papers have been published on GaN based RCLED. The main reason is the difficulty of growing structures. If the multilayer materials of AlGaN and GaN were used to from the DBR in th...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/27495701199930711357 |