InAlAs/InGaAs Metamorphic High Electron Mobility Transistors with a Liquid Phase Oxidized InAlAs as Gate Insulator
碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 94 === We have demonstrated that liquid phase oxidation (LPO) technique to grow native oxide films on InAlAs. The liquid phase oxidation system is simple, low cost and low temperature in comparison with the other oxidation system. In addition, the InAlAs/InGaAs m...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/71967336674866982559 |