A study of low temperature growing nanocrystalline silicon films and thin film transistor using hot-wire chemical vapor deposition

• Main Authors: Chi-Shang Lin, 林季尚
• Other Authors: Yen-Kun Fan
• Format: Others
• Language: zh-TW
• Published: 2006
• Online Access: http://ndltd.ncl.edu.tw/handle/86003493367046764521

碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 94 === Recently amorphous thin film transistor (a-Si),low temperature poly-Si TFT ,and nanocrystalline TFT(nc-Si TFT) have been studies widthly for flat panel display. However the fabrication process of amorphous silicon thin film transistor (a-Si TFT) is simple but it’s performances are low for electric mobility. Although low temperature polycrystalline silicon thin film transistor(poly-Si TFT)shows higher mobility than a-Si TFT, but it also possecess the high fabricating cost and complicated process. Only nanocrystalline silicon TFT(nc-Si TFT) shows better electric characteristics than a-Si TFT and easier fabricating process than poly-Si TFT. On the other hand, hot wire chemical vapor deposition (HWCVD) has been developed as a attractive technique for deposition of thin film nanocrystalline silicon films with low temperature and high deposition rate. In this thesis we present experimental results on HWCVD deposited nc-Si film on glass between 2500C at growth rate of 3.4nm/s.The influence of the deposition conditions such as temperature of filament, temperature of substrate, and hydrogen dilution on the material crystallinity were analyzed through FESEM, AFM, XRD, Raman Spectroscopy and Hall measurement. Additionly we have successfully fabrication nc-Si TFT with better field effect mobility about 3cm2/V•S than a-Si TFT.