Investigation of Emitter Ledge Structure and Surface Sulfur Passivation on Heterojunction Bipolar Transistors (HBTs)
碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 94 === Recently, due to the excellent current driving capability and microwave performances, Heterojunction bipolar transistors (HBTs) have extensively employed on digital and analogy applications. In this thesis, three GaAs/InGaP-based heterojunction bipolar trans...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/84152599139295714326 |