Effects of SiO2 Deposition Methods on Leakage Currents of GaN Light - Emitting Diodes
碩士 === 國立中興大學 === 精密工程學系所 === 94 === Recently GaN-based materials have become mature in fabricating light-emitting diodes (LEDs) from green to ultraviolet wavelength region. Generally, the planar-electrode GaN LED structure was covered by a surface passivation layer to reduce the density of surface...
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| Format: | Others |
| Language: | zh-TW |
| Online Access: | http://ndltd.ncl.edu.tw/handle/13170666599394056670 |