High Efficiency GaN Light Emitting Diodes Device by Photoelectrochemical technology
碩士 === 國立中興大學 === 材料工程學系所 === 94 === In this thesis, the Nitride-based light emitting diodes with a mesa sidewall roughening process to increase light output power have been study. The fabricated GaN-based LED wafers were treated through a photoelectrochemical (PEC) process. The Ga2O3 layer was form...
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| Format: | Others |
| Language: | zh-TW |
| Online Access: | http://ndltd.ncl.edu.tw/handle/8pap98 |