Preparation and Nanomechanical Properties of Porous SiO2 Low-Dielectric-Constant Films

Preparation and Nanomechanical Properties of Porous SiO2 Low-Dielectric-Constant Films

碩士 === 國立中興大學 === 材料工程學系所 === 94 === In this study, porous SiO2 low-dielectric-constant films containing different porosities and sizes of uniformly distributed pores were prepared. The nanomechanical properties of the porous SiO2 films were analyzed by a nanoindentation test. The hardness and elast...

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Bibliographic Details
Main Authors:	Yi-Chung Huang, 黃奕中
Other Authors:	Shou-Yi Chang
Format:	Others
Language:	zh-TW
Published:	2006
Online Access:	http://ndltd.ncl.edu.tw/handle/71440813628203783936

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