The Study of Optoelectrical Characteristics for Luminescence ZnO Thin Film

• Main Authors: Ming-Kun Sun, 孫銘琨
• Other Authors: Maw-Shung Lee
• Format: Others
• Language: zh-TW
• Published: 2006
• Online Access: http://ndltd.ncl.edu.tw/handle/74917962362164884488

碩士 === 國立高雄應用科技大學 === 電子與資訊工程研究所碩士班 === 94 === 　　In the study, The Zinc Oxide (ZnO) thin film was prepared on the SiO2/Si substrate at room temperature by reactive RF magnetron sputtering, and then was annealed at 900℃ in air for 45 minutes by conventional thermal annealing (CTA). The ZnO thin films discussed the variations of physical, electric, and optical characteristics in different sputtering pressure and oxygen concentration by SEM, AFM, XRD, EDS, FPPM, PL, and CL. In the experiment results, the thin film prepared with 21% oxygen concentration and 3 mtorr sputtering pressure determined a satisfied non-stoichiometry ZnO, and it appeared the good crystallization, conductivity, the maximum green and ultraviolet at PL and CL after annealed with the CTA method. 　　Finally, the variations of physical, electric, and optical characteristics discussed with different thermal process in air environment included one-step and two-step annealing. In the experiment results, the method annealed with two-step, annealed at 900℃ for 45 minutes by CTA followed that annealed at 500℃ for 2 minutes by rapid thermal annealing (RTA), it improved the characteristics of roughness, crystallization, conductivity, the green and ultraviolet at PL and CL in ZnO thin films.