The Study of Optoelectrical Characteristics for Luminescence ZnO Thin Film
碩士 === 國立高雄應用科技大學 === 電子與資訊工程研究所碩士班 === 94 === In the study, The Zinc Oxide (ZnO) thin film was prepared on the SiO2/Si substrate at room temperature by reactive RF magnetron sputtering, and then was annealed at 900℃ in air for 45 minutes by conventional thermal annealing (CTA). The ZnO thin films...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/74917962362164884488 |