UV Research of End-Hall IAD with MgF2 film using SF6 as working gas
碩士 === 輔仁大學 === 物理學系 === 94 === Traditionally Ar is used as a working gas to grow MgF2 thin film in IAD (ion-beam assisted deposition) process to increase the energies of deposited species such that the film quality is improved. However, there is always a loss of F- ions during the process which re...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/44807487026339999993 |