| Summary: | 碩士 === 逢甲大學 === 產業研發碩士班 === 94 === In this thesis, the characteristics of low-k porous silica films investigated with the single modification and two modification process. Ultra-low dielectric constant (low-k) porous silica films were successfully fabricated using a sol-gel process (molecular template and xerogel), and used twice surface-modification process to improve surface properties by trimethlchlorosilane (TMCS)/n-hexane solutions. Hydrophobic C–H groups in the films were found by FTIR spectra. The surface of films hydrophilic hydroxyl groups were replaced partly by hydrophobic C–H groups. C–H groups can more resistant to the moisture absorption, so the dielectric constant of the films can be kept low. The film doesn’t shrink after single modified. The porous silica films use twice surface modification, it had lower k values and leakage current. A good nanoporous structure and the pore sizes less than 10 nm were clearly observed by FESEM. The pore size of the film is more homogeneous and uniformity. The dielectric constant of twice-modified film decreases to 1.50 with 450℃ annealing. The annealing temperature can raises to 450℃ for 30 min, shows that the film has a better thermal stability, which is very satisfactory for back-end integrated circuit manufacturing technology.
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