| Summary: | 碩士 === 中原大學 === 電子工程研究所 === 94 === Abstract
For present silicon quantum-dots LEDs, to improve the external quantum efficiency and lower the threshold voltage of the device is a common challenge for every research team, especially grow the best film that silicon quantum dots embedded in it. So the quality of this film plays a critical role. In my experiment, the Non-stoichiometric silicon oxide (SiOx, x ≠ 2) films were deposited at 950-975℃ and in N2 environment by home made atmospheric-pressure halide chemical vapor deposition using SiH2Cl2 and N2O as the source materials. First, we change the flow rate ratio of SiH2Cl2 and N2O. When the flow rate of SiH2Cl2 was fixed and the flow rate of N2O was increased. We could observe blue shift in the spectrum of PL. On the other hand, the size of silicon QD was decreased with the flow rate of N2O was increased. Furthermore, the non-stoichiometric silicon oxide (SiOx, x ≠ 2) films were annealed in different temperature, the spectrum of PL was affected by annealing obviously. Besides, the resistivity of the non-stoichiometric silicon oxide (SiOx, x ≠ 2) films was high, therefore in order to improve the conductivity. We introduced into the flow rate of CBr4. , and its flow rate was 0, 5,10, 15 sccm, respectively. The n-type poly-GaN was the other topic in this work. We examine the conditions for obtaining low resistive contact to n-type poly-GaN using Ti/Au/Ni/Au multilayer metal system, and we want to grow it on the SiOx film for the window layer to improve the external quantum efficiency of the device.
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