The characteristics of Si quantum-dots LED by atmospheric-pressure halide chemical vapor deposition
碩士 === 中原大學 === 電子工程研究所 === 94 === Abstract For present silicon quantum-dots LEDs, to improve the external quantum efficiency and lower the threshold voltage of the device is a common challenge for every research team, especially grow the best film that silicon quantum dots embedded in it. So the...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/31537859411860056730 |