Study of Nanoscale Strained CMOS Devices and Novel Non-volatile Memory Devices
碩士 === 中原大學 === 電子工程研究所 === 94 === This paper reports the local process stress on CMOS devices and develops a new three-dimension flash memory cell. Process-induced strained silicon device technology is being adopted by the semiconductor industry to enhance the performance of the devices in the nano...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2006
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/40688296108423029280 |