The metal gate dependence of Frequency dispersion of the MOS capacitance with high-k and SiO2 gate dielectrics
碩士 === 長庚大學 === 電子工程研究所 === 94 === ccording to the ITRS (International Technology Roadmap for Semiconductor), the dimension of devices should be scaling down and gate oxide thickness decreased rapidly. As the oxide thickness less than 3nm, the gate leakage current and boron penetration through oxide...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/88929883337960714613 |