Field Effect Transistor of AlGaN/GaN on Si Substrate
碩士 === 長庚大學 === 電子工程研究所 === 94 === AlGaN/GaN HFETs have advantages in high-frequency (100GHz)、high-temperature (RT)、high-power、 low- noise applications of hetero-junction filed-effect transistors (HFETs) because of their high breakdown field, high peak velocity, high band-gap and thermal conductivi...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/57866122184032156279 |