A study of binary metal oxide for resistance random access memory application
碩士 === 長庚大學 === 光電工程研究所 === 94 === Non-volatile memory (NVM) represented as flash memory has already become an indispensable tool for modern portable and mobile electronic devices. Therefore they are quite reliant on the development of NVMs that have high speed, high unit cell density, low power con...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/65479654495503224039 |