Growth and characterization of Mg-doped In-rich InGaN
碩士 === 長庚大學 === 光電工程研究所 === 94 === In recent years, In-rich InxGa1-xN layers have been widely studied for the application of solar cell, double-heterojunction bipolar transistor and laser diodes. The large difference in growth temperature of InN and GaN presents a great challenge to the epitaxy of...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2006
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/00964953871167973325 |