| Summary: | 碩士 === 國立中正大學 === 光機電整合工程所 === 94 === The purpose of this study is to explore the characteristics of GaN-based light emitting diodes (LEDs) grown on (11-20) Al2O3 substrates. LEDs were grown on (11-20) Al2O3 substrates by metalorganic vapor phase epitaxy (MOVPE). Trimethylgallium (TMG) and ammonia (NH3) were used as the sources of Ga and N elements, respectively. The structural and optical properties of the GaN-based LEDs were identified by double crystal X-ray rocking curve (DCXRC) measurement, transmission electron microscopy (TEM), photoluminescence (PL) measurement and electroluminescence (EL) measurement. The experimental results indicate that GaN-based LEDs grown on (11-20) Al2O3 substrates exhibit good crystalline and optical properties. Based on the results of TEM observations, the threading dislocations inside the LED are primarily edge type or mixed type.
|
|---|
