Characterization of GaN-Based Light Emitting Diodes Grown on (11-20) Al2O3 Substrates
碩士 === 國立中正大學 === 光機電整合工程所 === 94 === The purpose of this study is to explore the characteristics of GaN-based light emitting diodes (LEDs) grown on (11-20) Al2O3 substrates. LEDs were grown on (11-20) Al2O3 substrates by metalorganic vapor phase epitaxy (MOVPE). Trimethylgallium (TMG) and ammonia (...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/14592852952658447234 |