| Summary: | 碩士 === 元智大學 === 機械工程學系 === 93 === For the current GaAs wafer processing such as dicing, die bonding, Filp-Chip bonding and inspection after assembly, all need the precision positioning of the wafer. Because it is unable to see through the wafer surface to detect the inside circuit for the alignment directly, it is relatively poor and indirect in the precision when using outer alignment marks. The study will apply the near infrared ray (NIR Alignment) alignment technique to improve the current positioning method in those non-through holes and non-transparent materials such as the GaAs wafer. By utilizing this technique can have much better accuracy and shorten the alignment time.
For the experiment, it uses a near infrared with the wavelength greater than 886 nm and a general CCD (wavelength is 400~1000nm), together with a NIR-Lens (wavelength is 400~1200nm) and the infrared light source (wavelength is 800~1300nm) to see through the smooth side of GaAs wafer surface. It is able to detect the circuit inside the wafer. The resulting images are then fitted into the self-developed software for the processing. A user -friendly interface is designed in the software so that the system is easy to operate in the wafer position alignment.
The software is developed with the Borland C ++ 6 tool and combined with the application of Matrox Imaging Library 7.0. The program is designed to have similar functions and interfaces as what the general commerce software has. For the hardware setups, the study surveys many of the CCD and Lenses capable of handling the infrared. And do trial tests with the GaAs wafer to obtain the best-fit system. It is then finalized to use in the alignment test. The alignment technique described in the study uses the circuit image inside the wafer directly for the positioning, it is considered as a very efficient and better method in the application of GaAs wafer equipments that need precision positioning.
|
|---|
