The electrical mechanisms of the dielectrics prepared by the anodization to fabricate HfO2 and HfON at room temperature
碩士 === 國立雲林科技大學 === 電子與資訊工程研究所 === 93 === This experiment is planned to utilize sputtering method to deposit ultrathin metal Hf or HfN in silicon basis, then, utilize anodization to make metal layer change into hafnium oxide (HfO2) and hafnium oxynitride (HfON) at room temperature. Whether the param...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/02211725871506093913 |