| Summary: | 碩士 === 大同大學 === 機械工程學系(所) === 93 === This thesis utilized plasma enhanced chemical vapor deposition (PECVD) to produce DLC by methane (CH4) on three different substrates, silicon wafer, Corning 1737 glass, and Kyocera A493 ceramic with two different thicknesses of titanium and chromium as the intermediate layers. The adhesion of DLC films on different intermediate layers and the roughness effect on different silicon substrate without intermediate layer was studied by Raman spectroscopy and nanoindentation.
The results showed that when the thickness of DLC thin film was thinner (200nm), the DLC thin film adhesion showed an improving phenomenon with glass as the substrate and chromium as an intermediate layer; however, as the thickness of DLC thin film increased, the effect of the DLC thin film adhesion got worse, irrespective of the intermediate layer was chromium or titanium. On the same specimen, as the thin film deposition process showed some non-uniformity, as the ratio of sp3/sp2 bond increased, the wrinkling and peeling situations got worse. As for the adhesion for etched silicon wafers with different surface roughness, The DLC thin film depositions were analyzed by Raman spectroscopy and the results showed that the surface bonding was almost the same. This finding showed that the roughness didn’t have much impact on the quality of film of DLC on silicon substrate.
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