Growth and Characteristics of Zn-doped InN Alloys on Sapphire by RF Reactive Magnetron Sputtering

• Main Authors: Hung-Chang Chen, 陳宏昌
• Other Authors: Lung-Chien Chen
• Format: Others
• Language: zh-TW
• Published: 2005
• Online Access: http://ndltd.ncl.edu.tw/handle/jbmjvv

碩士 === 國立臺北科技大學 === 光電工程系所 === 93 === This dissertation investigates the growth and characteristics of Zn-doped Indium nitride alloys on (0001) Sapphire substrate by RF reactive magnetron sputtering. By changing the deposition conditions such as chamber pressure, nitrogen flow rate and RF power, we found that at 500°C of substrate temperature, chamber pressure 3m Torr, N2 flow rate 9 sccm and RF power under 50W, we obtained the main orientation of InN (0002) thin film and a better electric conduction quality of zinc-doped Indium Nitride material; Hall mobility of 14.6cm2/V-s, 5.6e20cm-3 carrier concentration, and 15.9 Ω/□ sheet resistance was also obtained. Next, we experiment the different changes of zinc-doped InN and InN characteristics under different RF power. As a result, high thermal treatment didn''t improve the characteristics of n type InN. On the contrary, a p type In2O3:Zn thin film was produced. Finally, we used the p type sample to experiment Photoluminescence. As a conclusion, compared to InN band gap, in the former experiment, we discovered two main emission peaks: 3.342eV (371nm) and 3.238eV (383 nm), respectively defined as free-exciton (FE) or near band-to-band (B-B) radiation, and donor-to-valence-band (D-V) compound.