Study of an ultra-thin TaC diffusion barrier in the application of copper metallization
碩士 === 國立虎尾科技大學 === 光電與材料科技研究所 === 93 === In this study , we depoisited a 10 nm TaC thin film and a 100 nm copper thin film in order at (100)oriented p-type silicon substrate by a rf / dc-magnetron system. And to investigate the processes of the sputtered TaC thin film and to study diffusion barrier...
Main Authors: | , |
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Other Authors: | |
Format: | Others |
Language: | zh-TW |
Published: |
2005
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Online Access: | http://ndltd.ncl.edu.tw/handle/84v5z2 |