Study of an ultra-thin TaC diffusion barrier in the application of copper metallization

碩士 === 國立虎尾科技大學 === 光電與材料科技研究所 === 93 === In this study , we depoisited a 10 nm TaC thin film and a 100 nm copper thin film in order at (100)oriented p-type silicon substrate by a rf / dc-magnetron system. And to investigate the processes of the sputtered TaC thin film and to study diffusion barrier...

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Bibliographic Details
Main Authors: Wei-Li Wu, 吳偉立
Other Authors: 楊立中
Format: Others
Language:zh-TW
Published: 2005
Online Access:http://ndltd.ncl.edu.tw/handle/84v5z2