Synthesis of composite filmsfor graphite protection using chemical vapor deposition technique
碩士 === 國立臺灣科技大學 === 化學工程系 === 93 === The purpose of this research is to grow silicon carbide/silicon nitride composite films using TMS (tetramethylsilane), ammonia and hydrogen as the reactant gases by chemical vapor deposition. The reactant feed ratio of TMS/NH3 were varied from 0.75 to 24,the com...
Main Authors: | Chen Shih-Ping, 陳詩平 |
---|---|
Other Authors: | Hong Lu-Sheng |
Format: | Others |
Language: | zh-TW |
Published: |
2005
|
Online Access: | http://ndltd.ncl.edu.tw/handle/23213778464511869860 |
Similar Items
-
Growth of Carbon Nanotubes on Graphite via Chemical Vapor Deposition
by: Shih-min Chen, et al.
Published: (2012) -
Nucleation of chemical vapor deposited diamond from graphitic carbon
by: Li, Zhidan
Published: (1993) -
The Effect of Chemical Vapor Deposition Temperature on the
by: Lin, Zong-Ping, et al.
Published: (1997) -
Synthesis of Y-Tip Graphitic Nanoribbons from Alcohol Catalytic Chemical Vapor Deposition on Piezoelectric Substrate
by: Zainab Yunusa, et al.
Published: (2015-01-01) -
Extremely low stress UV-transparent Silicon nitride films deposited by plasma enhanced chemical vapor deposition
by: Lee, Shih-Ping, et al.
Published: (2010)