Growth and Characterization of Indium Nitride Thin Films Prepared by Chemical Beam Epitaxy

• Main Authors: YEH, CHUN-LIANG, 葉俊樑
• Other Authors: 周 賢 鎧
• Format: Others
• Language: en_US
• Published: 2005
• Online Access: http://ndltd.ncl.edu.tw/handle/53976937414224245161

碩士 === 國立臺灣科技大學 === 材料科技研究所 === 93 === We report successful growth of high-quality indium nitride (InN) thin films on GaN(001)/sapphire (SA)(001) substrates, via chemical beam epitaxy (CBE) using highly volatile HN3 as nitrogen source reagent. Characterizations of the as-grown films have been carried out using field-emission scanning electron microscopy (FE-SEM), high-resolution transmission electron microscopy (HR-TEM), selected-area electron diffractometry (SAED), X-ray diffractometry (XRD), X-ray rocking curve (XRC), Raman scattering (RS) and Photoluminescence (PL). HR-TEM micrographs and SAED patterns show the high crystallinity and nearly epitaxial growth of InN. Moreover, using the GaN(001)/sapphire(001) substrate without any buffer layer, the deposited InN films exhibit nearly pure (001) out-plane orientation. The effects of deposition temperature and rate on the surface morphology and out-plane orientation have been observed and discussed. Objective of this thesis is to synthesize and characterize InN thin films. A nearly epitaxial InN(001) film on the GaN(001)/sapphire(001) substrates is formed by using the K-cell (In) and HN3. Keywords：Indium Nitride, Thin Film, Chemical Beam Epitaxy