Growth and Characterization of Indium Nitride Thin Films Prepared by Chemical Beam Epitaxy
碩士 === 國立臺灣科技大學 === 材料科技研究所 === 93 === We report successful growth of high-quality indium nitride (InN) thin films on GaN(001)/sapphire (SA)(001) substrates, via chemical beam epitaxy (CBE) using highly volatile HN3 as nitrogen source reagent. Characterizations of the as-grown films have been carrie...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/53976937414224245161 |