Effects of Stress on MOS Devices with Ultra Thin Gate Oxides
碩士 === 國立臺灣大學 === 電子工程學研究所 === 93 === From fabrication to package, the wafers always sustain stress that makes the characteristics of wafer changing. Due to the rapid growth of nano technology development, dimensions of devices becomes smaller and smaller. The external stress is therefore becoming...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/96294039412888561177 |