Study on Etching of Ultra Low-k Dielectric Constant Materials
碩士 === 國立臺灣海洋大學 === 輪機工程系 === 93 === As ULSI are scaled down to deep submicron regime, interconnect delay becomes a increasingly dominant at intrinsic gate delay. Many new low dielectric constant materials have been developed to reduce the RC delay. However, the mechanical strength of porous low k m...
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| Format: | Others |
| Language: | zh-TW |
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2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/68080826236072852834 |