| Summary: | 碩士 === 國立清華大學 === 電子工程研究所 === 93 === Abstract
In this thesis, we investigated the application of low-dielectric-constant (low-k) hydrogen silsesquioxane (HSQ) for thin-film-transistor (TFT) technology. Low-k HSQ has the properties of the high transmittance (>90% at 300~800 nm), low photo leakage current and good planarization for TFT passivation layer. In addition, it can effectively increase the aperture ratio of display matrix and reduce resistance-capacitance delay (RC delay). Therefore, the application of the low-k materials on TFT device has become one of the most important issue for flat panel display. In this study we have investigated one of the promising candidates of low-k dielectrics, hydrogen silsesquioxane (HSQ), for TFT array technology application.
In TFT process, temperature is the most important issue. In this study, the characteristics of devices after different process temperature, 350, 330 and 300℃, are discussed.
In conclusion, we have found that HSQ film has high illumination, low photo leakage current; thereby, the leakage of devices is little changed by illumination. Otherwise, the Si-H bonds of HSQ may passivated the dangling bonds on the channel surface and the characteristic of device for HSQ 300℃ passivation is improved. This indicates that HSQ is the most possible candidate to replace the conventional SiNx passivation layer on TFT device in the future.
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