Growth of SiGe Virtual Substrates and Nanostructures by Ultra-High Vacuum Chemical Vapor Deposition
博士 === 國立清華大學 === 材料科學工程學系 === 93 === The Si-based metal-oxide-silicon field-effect-transistor (MOSFET) is currently the device of choice for state-of-the-art digital electronics. Historically, the performance improvements of MOSFETs have been attained by shrinking device dimensions such as gate len...
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| Format: | Others |
| Language: | en_US |
| Published: |
2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/14891719237257569987 |