The Development of A Potential NiMoP Barrier/Seed Layer for Cu Interconnect
博士 === 國立清華大學 === 化學工程學系 === 93 === A NiMoP film which may potentially be used as barrier/seed layer for Cu interconnect was successfully formed via electroless deposition atop SiO2. Four different wet processes were tried to activate the surface before electroless deposition. In addition, material...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/7me7am |