Characterization of GaN/AlGaN heterostructures grown by molecular beam epitaxy
碩士 === 國立中山大學 === 物理學系研究所 === 93 === We mainly studied the characterization of GaN/AlGaN heterostructures which were grown by molecular beam epitaxy. For reduced lattice mismatch, we inserted AlN as buffer layer. We varied the parameters of buffer layer, such as the ratio of nitrogen and aluminum an...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/43551969848473107235 |