Development of Stress Test for the Evaluation of SiNX Passivation Deposited on InGaP/GaAs HBTs
碩士 === 國立東華大學 === 材料科學與工程學系 === 93 === The thesis is focused on evaluating the performance and reliability of the InGaP heterojunction bipolar transistor（HBT）by optimum high current density test. It is divided into three parts. The first part is to develop an optimum high current density test and to...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2005
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/14646712265875618596 |
| Summary: | 碩士 === 國立東華大學 === 材料科學與工程學系 === 93 === The thesis is focused on evaluating the performance and reliability of the InGaP heterojunction bipolar transistor（HBT）by optimum high current density test. It is divided into three parts.
The first part is to develop an optimum high current density test and to verify the direct correlation between high current density test and conventional high temperature operating life test.
The second part is to understand the mechanism of device degeneration by observing current gain, ideality factor and to use modulation spectrum technique. The reason that the device begins to fail is due to the increase of space charge recombination current at low current density region. The result of the modulation spectrum technique shows that lattice defects or increased defect density occur at the interface between GaAs and SiNx and that results in the device failure.
The third part is to deposit silicon nitride films of different constituents as the passivation layers for the device then to testify that passivation layers. It shows that the passivation layers with reflective index close to 1.96 is capable of separating outside unstable bond and has best effect on protecting devices than other passivated layer.
|
|---|