Development of Stress Test for the Evaluation of SiNX Passivation Deposited on InGaP/GaAs HBTs
碩士 === 國立東華大學 === 材料科學與工程學系 === 93 === The thesis is focused on evaluating the performance and reliability of the InGaP heterojunction bipolar transistor（HBT）by optimum high current density test. It is divided into three parts. The first part is to develop an optimum high current density test and to...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/14646712265875618596 |