Characterization of the physical properties of GaSe1-xSx and Ge(Se1-xSx)2
碩士 === 國立東華大學 === 材料科學與工程學系 === 93 === In this study, single crystal of GaS was grown by the chemical-vapor transport method, GaSe1-xSx (0£x£0.5) and Ge(Se1-xSx)2 (0£x£1) series layered solids were grown by vertical Bridgman and chemical vapor transport methods. The crystsllinity was investigated by...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/36393014077601935530 |