ZnO: Al transparent conducting films sputtering and wet etching process and analysis

• Main Authors: Kui-Mian Lin, 林葵棉
• Other Authors: Yi - Cheng Lin
• Format: Others
• Language: zh-TW
• Published: 2005
• Online Access: http://ndltd.ncl.edu.tw/handle/59290330886132203101

碩士 === 國立彰化師範大學 === 機電工程學系 === 93 === In this thesis, we used chemical wet etching to discuss patterning characteristics of AZO films, including etching rates, and etching residue formations of the patterned films. First, we controlled parameters including RF power、substrate temperature and anneal to deposit the best optoelectronic and surface roughness and wet etching parameters including various etching solutions、concentration and temperature of etchants. In the experiment, the film thickness and etching rate were measured by a profilometer. The crystallinity、resistivity and optical transmittance spectra of the films were measured by an X- ray diffraction、a four-point probe method, and a UV-visible spectrum analyzer, respectively. The etching residue of the AZO films was examined by a scanning electron microscope. AZO films were deposited by r.f. magnetron sputtering on the 1737F glass with the best deposition parameter including work pressure 1.0×10-2 torr, work distance 5cm, RF power 200W and substrate temperature 200℃. We can get as-deposited AZO films which resistivity, transmittance and surface roughness is 8.64×10-3 Ωcm , 80% and Rms 2.176nm, respectively. And we can get better property (resistivity、transmittance and surface roughness is 1.81×10-3 Ωcm、83% and Rms 1.965nm, respectively)as-deposited AZO films to do annealing. When the temperature of etchants is 25 to 35±1℃. The fastest etching rate is aqua regia(HNO3:HCl:H2O=1:4:1000), then 3.4wt.% Oxalic acid and 2.38% TMAH. We suggest the best parameter to etch AZO film at 40±1℃ 2.38%TMAH without stripping, the etching rate was 20.9nm/min and without etching residue on the pattern . The undercut remains on the AZO pattern with etching residue and that causes a wrong size at 25±1℃ 3.4 wt.% Oxalic acid and aqua regia when the etching rate is 110nm/min and 388nm/min .