Fabrication and Characteristics of Micron-Size InGaN/GaN LEDs
碩士 === 國立中央大學 === 光電科學研究所 === 93 === In this thesis, the physical phenomenon and characteristics of GaN light emitting diode (LED) with different Micron-Size active region were fabricated and analyzed. Devices design and the optoelectronic characteristics will be discussed. For the devices desig...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/38805988727920007149 |