| Summary: | 碩士 === 國立交通大學 === 電子工程系所 === 93 === In this thesis, the substrate noise coupling effect in the lossy silicon substrate is investigated from the aspect of frequency domain. Therefore, the coupling effect produced by the passive device and MOSFET is also analyzed and modeled.
In the part of passive device, two types of inductor pairs are fabricated and the distance between the inductor pairs is varied to observe the substrate coupling effect with regards to the different distance. Furthermore, the characteristic of inductor changed by coupling effect is also studied. Then, from the measurement and simulation results, an equivalent circuit model of substrate noise coupling effect in the inductor pairs is proposed, too.
In the part of MOS transistor, we study the noise coupling from the source and drain depletion capacitance (formed by the P-N junction). However, these parasitic capacitances would couple the RF noise to substrate and then degrade the performance of RF circuit. From the point of view, the testkey is designed to measure the phenomenon of RF noise coupling effect. In the testkey, the N-diffusion and P-diffusion regions are formed inside the P-well and N-well then induce the junction capacitance. Next, the distance of two diffusion regions is changed and measured the S-parameters to obtain the noise coupling effect for the varying different distance.
Finally, these measurement results and equivalent circuit model would provide to circuit designers and hope the information would let the RF circuit design procedure be more efficient.
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