Analysis and Modeling of Substrate Noise Coupling in RFICs
碩士 === 國立交通大學 === 電子工程系所 === 93 === In this thesis, the substrate noise coupling effect in the lossy silicon substrate is investigated from the aspect of frequency domain. Therefore, the coupling effect produced by the passive device and MOSFET is also analyzed and modeled. In the part of passive de...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2005
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/43552724376916116352 |