| Summary: | 碩士 === 國立交通大學 === 電子工程系所 === 93 === A physically based analytic model is established at the top of the source-channel barrier in ultrathin film double-gate MOSFETs. The validity of the model is corroborated using 1-D Schrödinger-Poisson simulation, 2-D ballistic I-V simulation down to 10-nm channel length, and existing 2-D Monte Carlo particle and Green’s function simulations with the scattering included in the channel. Also presented specifically are the effect of backward to forward flux ratio on the thermal injection velocity at the top of the barrier, the comparison of DIBL extracted from the model with that from subthreshold I-V shift, the verification of the channel backscattering theory once the backward to forward flux ratio is replaced by the channel backscattering coefficient, and the potential applications of an improved expression for the width of the kBT layer (a critical zone, part of the barrier).
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