A Physically Based Analytic Model Including Backward to Forward Flux Ratio for Ultrathin Film Double-Gate MOSFETs
碩士 === 國立交通大學 === 電子工程系所 === 93 === A physically based analytic model is established at the top of the source-channel barrier in ultrathin film double-gate MOSFETs. The validity of the model is corroborated using 1-D Schrödinger-Poisson simulation, 2-D ballistic I-V simulation down to 10-nm channel...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/96433779622461150360 |