Effects of Post-Deposition N2O Plasma Treatment on the Reliability Issues of pMOSFETs with HfO2/SiON Gate Stacks
碩士 === 國立交通大學 === 電子工程系所 === 93 === With aggressive device scaling, shrinking the conventional thin silicon dioxide gate dielectric to the range of 2nm has caused an unbearable direct tunneling leakage current. To solve the problem, it is necessary to replace SiO2 by some high-k dielectric materials...
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| Format: | Others |
| Language: | en_US |
| Published: |
2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/87974793430070770445 |