Dual Work Function Metal Gate Technology Using Fully Molybdenum Silicidation
碩士 === 國立交通大學 === 電子工程系所 === 93 === We propose a new schematic structure for gate electrode to fabricate the CMOS device. That is using pure Mo and Mo-silicide gate for pMOS and nMOS device, respectively. That can eliminate the boron penetration, and provide excellent thermal stability up to 950 ℃....
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| Format: | Others |
| Language: | en_US |
| Published: |
2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/04862784810924629968 |