| Summary: | 碩士 === 國立交通大學 === 電子工程系所 === 93 === The bistable conductivity switching memory device using perovskite oxide thin films by sol-gel method in this thesis is a non-volatile RRAM memory device which is V, Mo, Cr doped SrZrO3. The top electrode is aluminum and bottom electrode is LaNiO3. The memory device has the simple device structure, MIM, high switching speed, low switching voltage, easy to define the H/L state, small size, low power consumption, and stable electric properties, making itself to be one of the candidates of new generation non-volatile memories. At the first chapter of this thesis, we introduce the perovskite structure and the advantages of sol-gel. Then, the experiment equipment and method will be introduced. In the experiment results, the physical properties will be discussed at first, including the thermal analysis, XRD, SEM. The electrical properties will include the switching current vs. bias voltage, the mechanism of leakage current,the effect of RTA temperature and ambience, the retention and temperature, the effect of pulse voltage height to leakage current, and the effect of switching speed, polarity to the leakage current.
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