Bistable Conductivity Switching Memory Devices Using Perovskite Oxide Thin Films By Sol-Gel Method
碩士 === 國立交通大學 === 電子工程系所 === 93 === The bistable conductivity switching memory device using perovskite oxide thin films by sol-gel method in this thesis is a non-volatile RRAM memory device which is V, Mo, Cr doped SrZrO3. The top electrode is aluminum and bottom electrode is LaNiO3. The memory devi...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/65317640719031869188 |