The Electrical and Material Characterization of Hafnium-family Gate Dielectric on Ge Substrate
碩士 === 國立交通大學 === 電子工程系所 === 93 === In this thesis, we have systematically investigated the electrical and material characteristics of hafnium-family gate dielectrics, including HfO2, HfOxNy and HfSiON, on bulk Ge substrates. For wet-chemical cleaning of bulk Ge wafers, the flatter surface morpholog...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/67121024898388599971 |