Fabrication of Metal Silicide Nanowire Using Atomic Force Microscope
碩士 === 國立暨南國際大學 === 電機工程學系 === 93 === Schottky barriers are used in a variety of devices and circuit applications, such as the gate electrode of the field-effect transistor, the drain and source contacts in SB MOSFET and Single Electron Transistors（SETs）. We propose a fabrication process for one-dim...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/55784554533553241765 |