The study of CMP Endpoint Detection Technology for Various Dielectrics and Metals
碩士 === 國立成功大學 === 電機工程學系碩博士班 === 93 === Following the successful application of the Chemical Mechanical Polishing (CMP) by IBM in 1983, the semiconductor manufacture process has been promoted to a new regime. Then the CMP becomes an very importance technology in ULSI manufacture soon and pushes th...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/11179780674022667028 |
| Summary: | 碩士 === 國立成功大學 === 電機工程學系碩博士班 === 93 === Following the successful application of the Chemical Mechanical Polishing (CMP) by IBM in 1983, the semiconductor manufacture process has been promoted to a new regime. Then the CMP becomes an very importance technology in ULSI manufacture soon and pushes the technology feature of IC process from 0.25 um to 0.13 um and even down to 90 nm during a short time of several years.
Global Planarization is the most feature of CMP process and depends on the precisely controlling of endpoint seriously.
In this thesis, the design and mechanism of various endpoint detection systems applied for dielectrics and metals have been studied in detail and evidenced experimentally.
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